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SeekIC No. : 00161962 Detail

NTHD3101FT3G: MOSFET -20V -4.4A P-Channel w/4.1A Schottky

NTHD3101FT3G Data Sheet

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Part Number:: NTHD3101FT3G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/21

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MOSFET -8V -4.6A P-Channel
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US $.23 - .36 / Piece

MOSFET -8V -4.6A P-Channel

Product Details

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Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	20 V
Gate-Source Breakdown Voltage :	+/- 8 V	Continuous Drain Current :	3.2 A
Resistance Drain-Source RDS (on) :	80 mOhms at 4.5 V	Configuration :	Single Dual Drain
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	Chip FET	Packaging :	Reel

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 3.2 A
Configuration : Single Dual Drain
Package / Case : Chip FET
Resistance Drain-Source RDS (on) : 80 mOhms at 4.5 V

Parameters:

Technical/Catalog Information	NTHD3101FT3G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	3.2A
Rds On (Max) @ Id, Vgs	80 mOhm @ 3.2A, 4.5V
Input Capacitance (Ciss) @ Vds	680pF @ 10V
Power - Max	1.1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	7.4nC @ 4.5V
Package / Case	8-ChipFET?
FET Feature	Diode (Isolated)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTHD3101FT3G NTHD3101FT3G

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