MOSFET 20V +3.9A/-4.4A Complementary
NTHD3100CT3G: MOSFET 20V +3.9A/-4.4A Complementary
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Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 12 V, +/- 8 V | Continuous Drain Current : | 2.9 A at N Channel, 3.2 A at P Channel | ||
Resistance Drain-Source RDS (on) : | 80 mOhms at 4.5 V | Configuration : | Dual Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | Chip FET | Packaging : | Reel |