MOSFET PFET TSOP6 20V 2.3A 160mOhm
NTGD4161PT1G: MOSFET PFET TSOP6 20V 2.3A 160mOhm
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 2.3 A | ||
Resistance Drain-Source RDS (on) : | 160 mOhms | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TSOP | Packaging : | Reel |
Technical/Catalog Information | NTGD4161PT1G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 P-Channel (Dual) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 1.5A |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 2.1A, 10V |
Input Capacitance (Ciss) @ Vds | 281pF @ 15V |
Power - Max | 600mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 7.1nC @ 10V |
Package / Case | 6-TSOP |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NTGD4161PT1G NTGD4161PT1G |