MOSFET PFET TSOP6 20V 2.3A 160mOhm
NTGD4161PT1G: MOSFET PFET TSOP6 20V 2.3A 160mOhm
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 2.3 A | ||
| Resistance Drain-Source RDS (on) : | 160 mOhms | Configuration : | Dual | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TSOP | Packaging : | Reel |
| Technical/Catalog Information | NTGD4161PT1G |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 1.5A |
| Rds On (Max) @ Id, Vgs | 160 mOhm @ 2.1A, 10V |
| Input Capacitance (Ciss) @ Vds | 281pF @ 15V |
| Power - Max | 600mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 7.1nC @ 10V |
| Package / Case | 6-TSOP |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NTGD4161PT1G NTGD4161PT1G |