MOSFET 8V +/-3.3A P-Channel w/Level Shift
NTGD1100LT1G: MOSFET 8V +/-3.3A P-Channel w/Level Shift
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Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | 8 V at P Channel | ||
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | +/- 3.3 A | ||
Resistance Drain-Source RDS (on) : | 140 mOhms at P Channel | Configuration : | Dual Common Drain Gate | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TSOP | Packaging : | Reel |
Technical/Catalog Information | NTGD1100LT1G |
Vendor | ON Semiconductor (VA) |
Category | Integrated Circuits (ICs) |
Type | General Purpose |
Number of Outputs | 1 |
Voltage - Input | 1.8 ~ 8 V |
Package / Case | 6-TSOP |
Packaging | Digi-Reel? |
Current Limit | 3.3A |
Internal Switch(s) | Yes |
Operating Temperature | -50°C ~ 150°C |
Rds (On) | 55 mOhm |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NTGD1100LT1G NTGD1100LT1G NTGD1100LT1GOSDKR ND NTGD1100LT1GOSDKRND NTGD1100LT1GOSDKR |