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NTE857M

Features: ` Available in Two Different Package Types: 8Lead Mini DIP (NTE857M) SOIC8 Surface Moun t (NTE857SM)` Low Input Noise Voltage: 18nVHz Typ` Low Harmonic Distortion: 0.01% Typ` Low Input Bias and Offset Currents` High Input Impedance: 1012 Typ` High Slew Rate: 13V/s Typ` Wide Gain Bandwidt...

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SeekIC No. : 004436512 Detail

NTE857M: Features: ` Available in Two Different Package Types: 8Lead Mini DIP (NTE857M) SOIC8 Surface Moun t (NTE857SM)` Low Input Noise Voltage: 18nVHz Typ` Low Harmonic Distortion: 0.01% Typ` Low Input Bia...

NTE857M Data Sheet

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Part Number:
NTE857M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` Available in Two Different Package Types: 8Lead Mini DIP (NTE857M) SOIC8 Surface Moun t (NTE857SM)
` Low Input Noise Voltage: 18nVHz Typ
` Low Harmonic Distortion: 0.01% Typ
` Low Input Bias and Offset Currents
` High Input Impedance: 1012 Typ
` High Slew Rate: 13V/s Typ
` Wide Gain Bandwidth: 4MHz Typ
` Low Supply Current: 1.4mA per Amp


Pinout

Connection Diagram


Specifications

Supply Voltage
VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +18V
VEE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Differential Input Voltage, VID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Input Voltage Range (Note 1), VIDR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V
Output ShortCircuit Duration (Note 2), tS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous
Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 680mW
Derate Above TA = +47 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mW/
Operating Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to +70
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  65° to +150
Note 1. The magnitude of the input voltage must not exceed the magnitude of the supply voltage or 15V, whichever is less.
Note 2. The output may be shorted to GND or either supply. Temperature and/or supply voltages must be limited to ensure that power dissipation ratungs are not exceeded.


Description

The NTE857M and NTE857SM are lownoise JFET input operational amplifiers combining two stateoftheart linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input offset voltage. The BIFET technology provides wide bandwidths and fast slew rates with low input bias currents, input offset currents, and supply currents. Moreover, these NTE857M exhibit lownoise and low harmonic distortion making them ideal for use in highfidelity audio amplifier applications.




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