NTE85

The NTE85 is designed as one kind of silicon NPN transistor and general purpose amplifier that can be used in (1)medium power amplifiers; (2)class B audio outputs; (3)HiFi drivers applications.

The absolute maximum ratings of the NTE85 can be summarized as:(1)CollectorEmitter Voltage, VCEO: 30 V;(2)CollectorBase Voltage, VCBO: 50 V;(3)EmitterBase Voltage, VEBO: 5 V;(4)Continuous Collector Current, IC: 500 mA;(5)Total Device Dissipation (TA = +25°C), PD: 625 mW;(6)Total Device Dissipation Derate Above 25°C: 5.0 mW/°C;(7)Operating Junction Temperature Range: 55°C to +150°C;(8)Storage Temperature Range, Tstg: 55°C to +150°C;(9)Thermal Resistance, JunctiontoCase, RthJC: 83.3°C/W;(10)Thermal Resistance, JunctiontoAmbient, RthJA: 200°C/W.

The electrical characteristics of this NTE85 can be summarized as:(1)CollectorEmitter Breakdown Voltage: 30 V;(2)CollectorBase Breakdown Voltage: 50 V;(3)EmitterBase Breakdown Voltage: 5.0 V;(4)Collector Cutoff Voltage: 100 nA;(5)Emitter Cutoff Current: 100 nA;(6)DC Current Gain: 100 to 300;(7)BaseEmitter ON Voltage: 0.5 to 1.0 V;(8)CollectorEmitter Saturation Voltage: 0.6 V;(9)Current GainBandwidth Product: 100 MHz;(10)CollectorBase Capacitance: 12 pF. If you want to know more information about the NTE85, please download the datasheet in www.seekic.com or www.chinaicmart.com .