NTD85N02R

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : DPAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 24 V
Continuous Drain Current : 85 A
Resistance Drain-Source RDS (on) : 0.0048 Ohms


Features:

• Pb−Free Packages are Available
• Planar HD3e Process for Fast Switching Performance
• Low RDS(on) to Minimize Conduction Loss
• Low Ciss to Minimize Driver Loss
• Low Gate Charge


Specifications

Rating	Symbol	Value	Unit
Drain−to−Source Voltage	VDSS	24	Vdc
Drain−to−Gate Voltage (RGS = 10 M)	VDGR	±20	Vdc
Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current Continuous @ TC = 25°C, Limited by Package Continuous @ TA = 25°C, Limited by Wires Single Pulse (tp 10s)	RJC PD ID ID IDM	1.6 78.1 85 32 96	°C/W W A A A
Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tp10 s)	RJA PD ID	52 2.4 16	°C/W W A
Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2)	RJA PD ID	100 1.25 12	°C/W W A
Operating and Storage Temperature Range	TJ, Tstg	−55 to 175
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, L = 1.0 mH, IL(pk) =13 Apk, VDS = 60 Vdc)	EAS	30	mJ
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds	TL	260

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 1 inch pad size, (Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using minimum recommended pad size, (Cu Area 0.412 in2).

Parameters:

Technical/Catalog Information	NTD85N02R
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	24V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	5.2 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds	2050pF @ 20V
Power - Max	1.25W
Packaging	Tube
Gate Charge (Qg) @ Vgs	17.7nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NTD85N02R NTD85N02R