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NTD80N02

MOSFET 24V 80A N-Channel

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SeekIC No. : 00164729 Detail

NTD80N02: MOSFET 24V 80A N-Channel

NTD80N02 Data Sheet

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Part Number:
NTD80N02
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 24 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 5.8 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : DPAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 5.8 mOhms
Drain-Source Breakdown Voltage : 24 V


Features:

• Pb−Free Packages are Available


Application

• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits


Pinout

Connection Diagram


Specifications

Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
24
Vdc
Gate−to−Source Voltage − Continuous
VGS
±20
Vdc
Drain Current
− Continuous @ TC = 25
− Single Pulse (tp10 s)

ID
IDM

80*
200
Adc

Total Power Dissipation @ TC = 25
PD
75
 Watts
Operating and Storage Temperature Range
TJ, Tstg
−55 to +150
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25
(VDD = 24 Vdc, VGS = 10 Vdc,IL = 17 Apk, L=5.0mH , RG = 25 )
EAS
733
mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)

RJC
RJA
RJA
1.65
67
120
/W
Maximum Lead Temperature for Soldering
Purposes, 1/8" from case for 10 seconds
TL
260

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1. When surface mounted to an FR4 board using 1, pad size, (Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in2).
*Chip current capability limited by package.


Description

 NTD80N02 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits .




Parameters:

Technical/Catalog InformationNTD80N02
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)24V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs5.8 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 2600pF @ 20V
Power - Max75W
PackagingTube
Gate Charge (Qg) @ Vgs42nC @ 4.5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTD80N02
NTD80N02



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