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NTD6600N

MOSFET 100V 12A N-Channel

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NTD6600N: MOSFET 100V 12A N-Channel

NTD6600N Data Sheet

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Part Number:
NTD6600N
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 146 mOhms at 5 V Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Package / Case : DPAK
Packaging : Tube
Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 146 mOhms at 5 V


Parameters:

Technical/Catalog InformationNTD6600N
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C12A
Rds On (Max) @ Id, Vgs146 mOhm @ 6A, 5V
Input Capacitance (Ciss) @ Vds 700pF @ 25V
Power - Max1.28W
PackagingTube
Gate Charge (Qg) @ Vgs20nC @ 5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTD6600N
NTD6600N



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