Position: Home  > All Categories> Integrated Circuits (ICs) > NTD60N02R

NTD60N02R

MOSFET 25V 62A N-Channel

product image

NTD60N02R Picture
See larger image
SeekIC No. : 00164617 Detail

NTD60N02R: MOSFET 25V 62A N-Channel

NTD60N02R Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
NTD60N02R
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/30

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 32 A
Resistance Drain-Source RDS (on) : 10.5 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Packaging : Tube
Continuous Drain Current : 32 A
Resistance Drain-Source RDS (on) : 10.5 mOhms


Features:

• Planar HD3e Process for Fast Switching Performance
• Low RDS(on) to Minimize Conduction Loss
• Low Ciss to Minimize Driver Loss
• Low Gate Charge
• Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters
• Pb−Free Packages are Available


Specifications

Rating Symbol Value Unit
Drain−to−Source Voltage VDSS 24 Vdc
Gate−to−Source Voltage − Continuous VDGR ±20 Vdc
Thermal Resistance
− Junction−to−Case
Total Power Dissipation @ TC = 25°C
Continuous Drain Current @ TC = 25°C (Note 4)
Continuous Drain Current @ TC = 100°C		 RJC
PD
ID
ID		 2.6
58
62
50
32		 °C/W
W
A
A
A
Thermal Resistance
− Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 100°C
Pulsed Drain Current (Note 3)		 RJA
PD
ID		 80
1.87
10.5		 C/W
W
A
Thermal Resistance
− Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 100°C
Pulsed Drain Current (Note 3)		 RJA
PD
ID		 80
1.87
10.5		 C/W
W
A
Thermal Resistance
− Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 100°C
Pulsed Drain Current (Note 3)		 TJ,Tstg −55 to175
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 10 Vdc, Peak IL = 17 Apk, L = 5.0 mH, RG = 25 W)		 EAS 60 mJ
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds TL 260

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 in sq drain pad size.
2. When surface mounted to an FR4 board using the minimum recommended pad size.




Parameters:

Technical/Catalog InformationNTD60N02R
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C8.5A
Rds On (Max) @ Id, Vgs10.5 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 1330pF @ 20V
Power - Max1.25W
PackagingTube
Gate Charge (Qg) @ Vgs14nC @ 4.5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTD60N02R
NTD60N02R



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Prototyping Products
AVT4168
DE1
Integrated Circuits (ICs)
TA8435H
1MB12-140
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Audio Products
HUC1002
WM-64CT
Line Protection, Backups
BX0023
A20B-1008-0550
Tapes, Adhesives
803
AC452-2
View more