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NTD60N02RT4G

MOSFET 25V 62A N-Channel

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SeekIC No. : 00163949 Detail

NTD60N02RT4G: MOSFET 25V 62A N-Channel

NTD60N02RT4G Data Sheet

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Part Number:
NTD60N02RT4G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 32 A
Resistance Drain-Source RDS (on) : 10.5 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Continuous Drain Current : 32 A
Resistance Drain-Source RDS (on) : 10.5 mOhms


Parameters:

Technical/Catalog InformationNTD60N02RT4G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C8.5A
Rds On (Max) @ Id, Vgs10.5 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 1330pF @ 20V
Power - Max1.25W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs14nC @ 4.5V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTD60N02RT4G
NTD60N02RT4G
NTD60N02RT4GOSTR ND
NTD60N02RT4GOSTRND
NTD60N02RT4GOSTR



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