MOSFET NFET 25V 65A 0.0075R DPAK
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 25 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 13 A | ||
Resistance Drain-Source RDS (on) : | 7.5 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | IPAK | Packaging : | Rail |
Technical/Catalog Information | NTD4860N-35G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25° C | 10.4A |
Rds On (Max) @ Id, Vgs | 7.5 mOhm @ 30A, 10V |
Input Capacitance (Ciss) @ Vds | 1308pF @ 12V |
Power - Max | 1.28W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 16.5nC @ 4.5V |
Package / Case | IPak, TO-251, DPak (3 straight short leads + tab) |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NTD4860N 35G NTD4860N35G |