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NTD4857N

Features: •Trench Technology•Low R DS(on) to Minimize Conduction Losses•Low Capacitance to Minimize Driver Losses•Optimized Gate Charge to Minimize Switching Losses•These are Pb-Free DevicesApplication•VCORE Applications•DC-DC Converters•Low Side Swi...

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SeekIC No. : 004435856 Detail

NTD4857N: Features: •Trench Technology•Low R DS(on) to Minimize Conduction Losses•Low Capacitance to Minimize Driver Losses•Optimized Gate Charge to Minimize Switching Losses•The...

NTD4857N Data Sheet

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Part Number:
NTD4857N
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

•Trench Technology
•Low R DS(on) to Minimize Conduction Losses
•Low Capacitance to Minimize Driver Losses
•Optimized Gate Charge to Minimize Switching Losses
•These are Pb-Free Devices


Application

•VCORE Applications
•DC-DC Converters
•Low Side Switching


Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 25 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain
Current RJA
(Note 1)		 Steady
State		 TA = 25°C ID 15 A
TA = 85°C 11.7
Power Dissipation
RJA (Note 1)		 TA = 25°C PD 2.1 W
Continuous Drain
Current RJA
(Note 2)		 TA = 25°C ID 12 A
TA = 85°C 9.3
Power Dissipation
RJA (Note 2)		 TA = 25°C PD 1.31 W
Continuous Drain
Current RJC
(Note 1)		 TA = 25°C ID 78 A
TA = 85°C 61
Power Dissipation
RJC (Note 1)		 TA = 25°C PD 56.6 W
Pulsed Drain
Current		 TA = 25°C IDM 156 A
Current Limited by Package TA = 25°C IDmaxPkg 45 A
Operating Junction and Storage
Temperature		 TJ,
TSTG		 -55 to
+175		 °C
Source Current (Body Diode) IS 47 A
Drain to Source dV/dt dV/dt 6 V/ns
Single Pulse Drain-to-Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 17 Apk, L = 1.0 mH, RG = 25 )		 EAS 144.5 mJ
Lead Temperature for Soldering Purposes
(1/8" from case for 10 s)		 TL 260 °C



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