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NTD4856N-1G

MOSFET NFET 25V 89A 0.0047R DPAK

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SeekIC No. : 00154622 Detail

NTD4856N-1G: MOSFET NFET 25V 89A 0.0047R DPAK

NTD4856N-1G Data Sheet

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Part Number:
NTD4856N-1G
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 16.8 A
Resistance Drain-Source RDS (on) : 4.7 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Rail    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Resistance Drain-Source RDS (on) : 4.7 mOhms
Package / Case : IPAK
Packaging : Rail
Continuous Drain Current : 16.8 A


Parameters:

Technical/Catalog InformationNTD4856N-1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C13.3A
Rds On (Max) @ Id, Vgs4.7 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 2241pF @ 12V
Power - Max1.33W
PackagingTube
Gate Charge (Qg) @ Vgs27nC @ 4.5V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTD4856N 1G
NTD4856N1G



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