NTD4810NH-35G

MOSFET N-CH 30V 8.6A IPAK

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SeekIC No. : 003430542 Detail

NTD4810NH-35G: MOSFET N-CH 30V 8.6A IPAK

floor Price/Ceiling Price

Part Number:
NTD4810NH-35G
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Series: - Manufacturer: ON Semiconductor
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 8.6A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) @ Vgs: 12nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1225pF @ 12V
Power - Max: 1.28W Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak Supplier Device Package: I-Pak    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) @ Vgs: 12nC @ 4.5V
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 8.6A
Supplier Device Package: I-Pak
Manufacturer: ON Semiconductor
Package / Case: TO-251-3 Stub Leads, IPak
Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V
Power - Max: 1.28W
Input Capacitance (Ciss) @ Vds: 1225pF @ 12V


Parameters:

Technical/Catalog InformationNTD4810NH-35G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C8.6A
Rds On (Max) @ Id, Vgs10 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 1225pF @ 12V
Power - Max1.28W
PackagingTube
Gate Charge (Qg) @ Vgs12nC @ 4.5V
Package / CaseIPak, TO-251, DPak (3 straight short leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTD4810NH 35G
NTD4810NH35G



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