Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) @ Vgs: 12nC @ 4.5V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Current - Continuous Drain (Id) @ 25° C: 8.6A
Supplier Device Package: I-Pak
Manufacturer: ON Semiconductor
Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V
Power - Max: 1.28W
Input Capacitance (Ciss) @ Vds: 1225pF @ 12V
Parameters: | Technical/Catalog Information | NTD4810NH-1G |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 8.6A |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 30A, 10V |
| Input Capacitance (Ciss) @ Vds | 1225pF @ 12V |
| Power - Max | 1.28W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 12nC @ 4.5V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NTD4810NH 1G
NTD4810NH1G
|
NTD4810NH-1G Data Sheet
