NTD4809NH

Features: • Low RDS(on) to Minimize Conduction Losses• Low Capacitance to Minimize Driver Losses• Optimized Gate Charge to Minimize Switching Losses• These are Pb−Free DevicesApplication• CPU Power Delivery• DC−DC Converters• Low Side Switching...

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SeekIC No. : 004435855 Detail

NTD4809NH: Features: • Low RDS(on) to Minimize Conduction Losses• Low Capacitance to Minimize Driver Losses• Optimized Gate Charge to Minimize Switching Losses• These are Pb−Free ...

floor Price/Ceiling Price

Part Number:
NTD4809NH
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/8

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Product Details

Description



Features:

• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb−Free Devices



Application

• CPU Power Delivery
• DC−DC Converters
• Low Side Switching



Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain
Current RJA
(Note 1)
Steady
State
TA = 25°C ID 11.5 A
TA = 85°C 9.0
Power Dissipation
RJA (Note 1)
TA = 25°C PD 2.0 W
Continuous Drain
Current RJA
(Note 2)
TA = 25°C ID 9.0 A
TA = 85°C 7.0
Power Dissipation
RJA (Note 2)
TA = 25°C PD 1.3 W
Continuous Drain
Current RJC
(Note 1)
TA = 25°C ID 58 A
TA = 85°C 45
Power Dissipation
RJC (Note 1)
TA = 25°C PD 52 W
Pulsed Drain
Current
TA = 25°C IDM 130 A
Current Limited by Package TA = 25°C IDmaxPkg 45 A
Operating Junction and Storage
Temperature
TJ,
TSTG
-55 to
+175
°C
Source Current (Body Diode) IS 43 A
Drain to Source dV/dt dV/dt 6.0 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 24 V, VGS = 10 V,
L = 1.0 mH, IL(pk) = 15 A, RG = 25 )
EAS 112.5 mJ
Lead Temperature for Soldering Purposes
(1/8" from case for 10 s)
TL 260 °C



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