Features: • Low RDS(on) to Minimize Conduction Losses• Low Capacitance to Minimize Driver Losses• Optimized Gate Charge to Minimize Switching Losses• These are Pb−Free DevicesApplication• CPU Power Delivery• DC−DC Converters• Low Side Switching...
NTD4809NH: Features: • Low RDS(on) to Minimize Conduction Losses• Low Capacitance to Minimize Driver Losses• Optimized Gate Charge to Minimize Switching Losses• These are Pb−Free ...
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Parameter | Symbol | Value | Unit | ||
Drain-to-Source Voltage | VDSS | 30 | V | ||
Gate-to-Source Voltage | VGS | ±20 | V | ||
Continuous Drain Current RJA (Note 1) |
Steady State |
TA = 25°C | ID | 11.5 | A |
TA = 85°C | 9.0 | ||||
Power Dissipation RJA (Note 1) |
TA = 25°C | PD | 2.0 | W | |
Continuous Drain Current RJA (Note 2) |
TA = 25°C | ID | 9.0 | A | |
TA = 85°C | 7.0 | ||||
Power Dissipation RJA (Note 2) |
TA = 25°C | PD | 1.3 | W | |
Continuous Drain Current RJC (Note 1) |
TA = 25°C | ID | 58 | A | |
TA = 85°C | 45 | ||||
Power Dissipation RJC (Note 1) |
TA = 25°C | PD | 52 | W | |
Pulsed Drain Current |
TA = 25°C | IDM | 130 | A | |
Current Limited by Package | TA = 25°C | IDmaxPkg | 45 | A | |
Operating Junction and Storage Temperature |
TJ, TSTG |
-55 to +175 |
°C | ||
Source Current (Body Diode) | IS | 43 | A | ||
Drain to Source dV/dt | dV/dt | 6.0 | V/ns | ||
Single Pulse Drain−to−Source Avalanche Energy (VDD = 24 V, VGS = 10 V, L = 1.0 mH, IL(pk) = 15 A, RG = 25 ) |
EAS | 112.5 | mJ | ||
Lead Temperature for Soldering Purposes (1/8" from case for 10 s) |
TL | 260 | °C |