NTD4809NA-1G Selling Leads, Price trend , ON Semiconductor, NTD4809NA-1G DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00162532 Detail

NTD4809NA-1G: MOSFET NFET 30V 58A 9MOHM

NTD4809NA-1G Data Sheet

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Part Number:: NTD4809NA-1G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/21

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	11.5 A
Resistance Drain-Source RDS (on) :	9 mOhms at 11.5 V	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	Through Hole
Package / Case :	IPAK	Packaging :	Rail

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Continuous Drain Current : 11.5 A
Package / Case : IPAK
Packaging : Rail
Resistance Drain-Source RDS (on) : 9 mOhms at 11.5 V

Parameters:

Technical/Catalog Information	NTD4809NA-1G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	9A
Rds On (Max) @ Id, Vgs	9 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	1456pF @ 12V
Power - Max	2W
Packaging	Tube
Gate Charge (Qg) @ Vgs	13nC @ 4.5V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTD4809NA 1G NTD4809NA1G

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NTD4809NA-1G

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