NTD4806N-35G, US $ .19-.41 , ON Semiconductor, NTD4806N-35G DataSheet download, circuit diagram from SeekIC.com

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NTD4806N-35G: MOSFET NFET 30V 76A 6MOHM

NTD4806N-35G Data Sheet

US $ .19~.41 / Piece | Get Latest Price

Part Number:: NTD4806N-35G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/21

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US $.16 - .23 / Piece

MOSFET 25V 45A N-Channel

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	15.6 A
Resistance Drain-Source RDS (on) :	6 mOhms at 11.5 V	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	Through Hole
Package / Case :	IPAK	Packaging :	Rail

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Package / Case : IPAK
Packaging : Rail
Continuous Drain Current : 15.6 A
Resistance Drain-Source RDS (on) : 6 mOhms at 11.5 V

Parameters:

Technical/Catalog Information	NTD4806N-35G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	6 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	2142pF @ 12V
Power - Max	1.33W
Packaging	Tube
Gate Charge (Qg) @ Vgs	23nC @ 4.5V
Package / Case	IPak, TO-251, DPak (3 straight short leads + tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTD4806N 35G NTD4806N35G

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NTD4806N-35G

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