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NTD4805N

Features: • Low RDS(on) to Minimize Conduction Losses• Low Capacitance to Minimize Driver Losses• Optimized Gate Charge to Minimize Switching Losses• These are Pb−Free DevicesApplication• CPU Power Delivery• DC−DC Converters• Low Side Switching...

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SeekIC No. : 004435854 Detail

NTD4805N: Features: • Low RDS(on) to Minimize Conduction Losses• Low Capacitance to Minimize Driver Losses• Optimized Gate Charge to Minimize Switching Losses• These are Pb−Free ...

NTD4805N Data Sheet

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Part Number:
NTD4805N
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb−Free Devices


Application

• CPU Power Delivery
• DC−DC Converters
• Low Side Switching


Pinout

Connection Diagram


Specifications

Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 30 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain
Current (RJA) (Note 1)		 Steady
State		 TA = 25 ID 16 A
TA = 85 12.6
Power Dissipation
(RJA) (Note 1)		 TA = 25 PD 224 W
Continuous Drain
Current (RJA) (Note 2)		 TA = 25 ID 12.6 A
TA = 85 9.8
Power Dissipation
(RJA) (Note 2)		 TA = 25 PD 1.35 W
Continuous Drain
Current (RJC)
(Note 1)		 TA = 25 ID 88 A
TA = 85 68
Power Dissipation
(RJC) (Note 1)		 TA = 25 PD 66 W
Pulsed Drain Current tp=10s TA = 25 IDM 175 A
Current Limited by Package TA = 25 IDmaxPkg 45 A
Operating Junction and Storage Temperature TJ, Tstg −55 to
175
Source Current (Body Diode) IS 55 A
Drain to Source dV/dt dV/dt 6.0 V/ns
Single Pulse Drain−to−Source Avalanche Energy (VDD = 30 V, VGS = 10 V, L = 1.0 mH, IL(pk) = 24 A, RG = 25 ) EAS 288 mJ
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)		 TL 260
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.


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