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NTD4302

MOSFET 30V 68A N-Channel

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SeekIC No. : 00166628 Detail

NTD4302: MOSFET 30V 68A N-Channel

NTD4302 Data Sheet

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Part Number:
NTD4302
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 68 A
Resistance Drain-Source RDS (on) : 10 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : DPAK
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Resistance Drain-Source RDS (on) : 10 mOhms
Continuous Drain Current : 68 A


Features:

• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• IDSS Specified at Elevated Temperature
• DPAK Mounting Information Provided


Application

• DC−DC Converters
• Low Voltage Motor Control
• Power Management in Portable and Battery Powered Products: i.e., Computers, Printers, Cellular and Cordless Telephones, and PCMCIA Cards


Specifications

Rating Symbol Value Unit
Drain−to−Source Voltage VDSS 24 Vdc
Gate−to−Source Voltage − Continuous VDGR ±20 Vdc
Thermal Resistance
− Junction−to−Case
Total Power Dissipation @ TC = 25°C
Continuous Drain Current @ TC = 25°C (Note 4)
Continuous Drain Current @ TC = 100°C		 RJC
PD
ID
ID		 1.65
75
68
43		 °C/W
Watts
Amps
Amps
Thermal Resistance
− Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 100°C
Pulsed Drain Current (Note 3)		 RJA
PD
ID
ID
IDM		 67
1.87
11.3
7.1
36		 °C/W
Watts
Amps
Amps
Amps
Thermal Resistance
− Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 100°C
Pulsed Drain Current (Note 3)		 RJA
PD
ID
ID
IDM		 120
1.04
8.4
5.3
28		 °C/W
Watts
Amps
Amps
Amps
Thermal Resistance
− Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 100°C
Pulsed Drain Current (Note 3)		 TJ,Tstg −55 to150
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 10 Vdc, Peak IL = 17 Apk, L = 5.0 mH, RG = 25 W)		 EAS 722 mJ
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds TL 260
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
4. Current Limited by Internal Lead Wires.


Parameters:

Technical/Catalog InformationNTD4302
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C5.3A
Rds On (Max) @ Id, Vgs10 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 2400pF @ 24V
Power - Max1.04W
PackagingTube
Gate Charge (Qg) @ Vgs80nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTD4302
NTD4302



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