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NTD4302-1G

MOSFET 30V 68A N-Channel

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SeekIC No. : 00161631 Detail

NTD4302-1G: MOSFET 30V 68A N-Channel

NTD4302-1G Data Sheet

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Part Number:
NTD4302-1G
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 68 A
Resistance Drain-Source RDS (on) : 10 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 10 mOhms
Continuous Drain Current : 68 A


Parameters:

Technical/Catalog InformationNTD4302-1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C5.3A
Rds On (Max) @ Id, Vgs10 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 2400pF @ 24V
Power - Max1.04W
PackagingTube
Gate Charge (Qg) @ Vgs80nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTD4302 1G
NTD43021G



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