MOSFET -60V -12A P-Channel
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 12 A | ||
Resistance Drain-Source RDS (on) : | 180 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Tube |
Rating |
Symbol |
Value |
Unit |
Drain−to−Source Voltage |
VDSS |
-60 |
Vdc |
Gate−to−Source Voltage − Continuous − Non−Repetitive (tp10 ms) |
VGS VGSM |
±20 ±25 |
Vdc |
Drain Current − Continuous @ TC = 25 − Single Pulse (tp10 ms) |
ID IDM |
-12 -36 |
Adc Apk |
Total Power Dissipation @ TC = 25 |
PD |
55 |
W |
Operating and Storage Temperature Range |
TJ, Tstg |
−55 to +175 |
|
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25 (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 12 Apk, L = 3.0 mH, RG = 25) |
EAS |
216 |
mJ |
Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) |
RJC RJA RJA |
2.73 71.4 100 |
/W |
Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds |
TL |
260 |
|
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 1 in pad size (Cu area = 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended pad size (Cu area = 0.412 in2).
This Power MOSFET NTD2955 is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power motor controls, these NTD2955 are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients.