NTD2955

MOSFET -60V -12A P-Channel

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SeekIC No. : 00163515 Detail

NTD2955: MOSFET -60V -12A P-Channel

floor Price/Ceiling Price

Part Number:
NTD2955
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/8

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 180 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Tube    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Transistor Polarity : P-Channel
Packaging : Tube
Continuous Drain Current : 12 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 180 mOhms


Features:

• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Designed for Low−Voltage, High−Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes
• Pb−Free Packages are Available



Pinout

  Connection Diagram


Specifications

Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
-60
Vdc
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tp10 ms)
VGS
VGSM
±20
±25
Vdc
Drain Current
− Continuous @ TC = 25
− Single Pulse (tp10 ms)

ID
IDM

-12
-36
Adc
Apk
Total Power Dissipation @ TC = 25
PD
55

W

Operating and Storage Temperature Range
TJ, Tstg
−55 to +175
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 12 Apk, L = 3.0 mH, RG = 25)
EAS
216
mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)

RJC
RJA
RJA
2.73
71.4
100
/W
Maximum Lead Temperature for Soldering
Purposes, 1/8" from case for 10 seconds
TL
260

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1. When surface mounted to an FR4 board using 1 in pad size (Cu area = 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended pad size (Cu area = 0.412 in2).




Description

This Power MOSFET NTD2955 is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power motor controls, these NTD2955 are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients.




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