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NTD25P03L

MOSFET -30V -25A P-Channel

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SeekIC No. : 00165129 Detail

NTD25P03L: MOSFET -30V -25A P-Channel

NTD25P03L Data Sheet

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Part Number:
NTD25P03L
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 15 V Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 80 mOhms at 5 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Tube    

Description

Configuration : Single
Mounting Style : SMD/SMT
Package / Case : DPAK
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 15 V
Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 80 mOhms at 5 V


Application

• PWM Motor Controls
• Power Supplies
• Converters
• Bridge Circuits
• Pb−Free Package is Available


Pinout

Connection Diagram


Specifications

Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
-30
V
Gate−to−Source Voltage
− Continuous
− Non−repetitive (tp10 ms)
VGS
VGS
±15
±20
V
Vdc
Drain Current
− Continuous @ TA = 25°C
− Single Pulse (tp10 s), TJ = 175°C
ID
ID
ID
IDM
−25
−75
A
Apk
Total Power Dissipation @ TA = 25°C
PD
75
Watts
Operating and Storage Temperature Range
TJ, Tstg
−55 to
+150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc,
Peak IL = 20 Apk, L = 1.0 mH,
RG = 25)
EAS
200
mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
RJC
RJA
RJA
1.65
67
120
°C/W
Maximum Lead Temperature for Soldering Purposes,
1/8 from case for 10 seconds
TL
260
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using the minimum recommended pad size.


Description

 NTD25P03L Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast recovery diode.




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