MOSFET 25V 23A N-Channel
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 25 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 4.5 A | ||
Resistance Drain-Source RDS (on) : | 45 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Reel |
Technical/Catalog Information | NTD23N03RT4G |
Vendor | ON Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25° C | 3.8A |
Rds On (Max) @ Id, Vgs | 45 mOhm @ 6A, 10V |
Input Capacitance (Ciss) @ Vds | 225pF @ 20V |
Power - Max | 1.14W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 3.76nC @ 4.5V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NTD23N03RT4G NTD23N03RT4G NTD23N03RT4GOSCT ND NTD23N03RT4GOSCTND NTD23N03RT4GOSCT |