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NTD23N03R-1G

MOSFET 25V 23A N-Channel

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SeekIC No. : 00161511 Detail

NTD23N03R-1G: MOSFET 25V 23A N-Channel

NTD23N03R-1G Data Sheet

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Part Number:
NTD23N03R-1G
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 23 A
Resistance Drain-Source RDS (on) : 45 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : IPAK Packaging : Tube    

Description

Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : IPAK
Continuous Drain Current : 23 A
Resistance Drain-Source RDS (on) : 45 mOhms
Transistor Polarity : N Channel


Parameters:

Technical/Catalog InformationNTD23N03R-1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C3.8A
Rds On (Max) @ Id, Vgs45 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 225pF @ 20V
Power - Max1.14W
PackagingTube
Gate Charge (Qg) @ Vgs3.76nC @ 4.5V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTD23N03R 1G
NTD23N03R1G
NTD23N03R 1GOS ND
NTD23N03R1GOSND
NTD23N03R-1GOS



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