MOSFET 60V 20A N-Channel
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 15 V | Continuous Drain Current : | 20 A | ||
Resistance Drain-Source RDS (on) : | 48 mOhms at 5 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Tube |
Rating | Symbol | Value | Unit |
Drain−to−Source Voltage | VDSS | 60 | Vdc |
Drain−to−Gate Voltage (RGS = 10 M) | VDGR | 60 | Vdc |
Gate−to−Source Voltage − Continuous − Non−repetitive (tp10 ms) |
VGS VGS |
±15 ±20 |
Vdc |
Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tp10 s) |
ID ID IDM |
20 10 60 |
Adc Apk |
Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) |
PD | 60 0.40 1.88 1.36 |
W W/ W W |
Operating and Storage Temperature Range | TJ, Tstg | −55 to 175 |
|
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, L = 1.0 mH, IL(pk) = 7.75 A, VDS = 60 Vdc) |
EAS | 128 | mJ |
Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) |
RJC RJA RJA |
2.5 80 110 |
/W |
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds |
TL | 260 |