MOSFET 60V 20A N-Channel
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 20 A | ||
Resistance Drain-Source RDS (on) : | 46 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Tube |
Rating |
Symbol |
Value |
Unit |
Drain−to−Source Voltage |
VDSS |
60 |
Vdc |
Drain−to−Gate Voltage (RGS = 10 M) |
VDGR |
60 |
Vdc |
Gate−to−Source Voltage − Continuous − Non−Repetitive (tp10 ms) |
VGS VGS |
±20 ±30 |
Vdc |
Drain Current − Continuous @ TC = 25 − Continuous @ TC = 100 − Single Pulse (tp10 s) |
ID ID IDM |
20 10 60 |
Adc Apk |
Total Power Dissipation @ TC = 25 Derate above 25 Total Power Dissipation @ TC = 25 (Note 1) Total Power Dissipation @ TC = 25 (Note 2) |
PD |
60 0.40 1.88 1.36 |
W |
Operating and Storage Temperature Range |
TJ, Tstg |
−55 to +175 |
|
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25 (VDD = 25 Vdc, VGS = 10 Vdc, L = 1.0 mH IL(pk) = 18.4 A, VDS = 60 Vdc) |
EAS |
170 |
mJ |
Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) |
RJC RJA RJA |
2.5 80 110 |
/W |
Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds |
TL |
260 |
|
NTD20N06 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.