NTB75N06

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Packaging : Tube
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 9.5 mOhms
Continuous Drain Current : 75 A


Features:

• Pb−Free Packages are Available


Application

• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits


Specifications

Rating	Symbol	Value	Unit
Drain−to−Source Voltage	VDSS	60	Vdc
Drain−to−Gate Voltage (RGS = 10 M)	VDGR	60	Vdc
Gate−to−Source Voltage − Continuous − Non−Repetitive (tp10 ms)	VGS VGS	±20 ±30	Vdc
Drain Current − Continuous @ TA = 25 − Continuous @ TA = 100 − Single Pulse (tp10 µs)	ID ID IDM	75 50 255	Adc Apk
Total Power Dissipation @ TA = 25 Derate above 25 Total Power Dissipation @ TA = 25(Note 1)	PD	214 1.4 2.4	W W/ W
Operating and Storage Temperature Range	TJ, Tstg	−55 to +175
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25 (VDD = 75 Vdc, VGS = 10 Vdc, L = 0.3 mH IL(pk) = 55 A, VDS = 60 Vdc)	EAS	884	mJ
Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1)	RJC RJA	0.7 62.5	/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds	TL	260

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.