Features: • Ultra−Low RDS(on), Single Base, Advanced Technology• SPICE Parameters Available• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated Temperatures• High Avalanche Energy Capability• ESD JEDAC Rated HBM Class...
NTB75N03-06: Features: • Ultra−Low RDS(on), Single Base, Advanced Technology• SPICE Parameters Available• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specifi...
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Rating |
Symbol |
Value |
Unit |
Drain−to−Source Voltage |
VDSS |
30 |
Vdc |
Drain−to−Gate Voltage (RGS = 10 M) |
VDGB |
30 |
Vdc |
Gate−to−Source Voltage − Continuous |
VGS |
±20 |
Vdc |
Non−repetitive (tp 10 ms) |
VGS |
±24 |
Vdc |
Drain Current − Continuous @ TC = 25 − Continuous @ TC = 100 − Single Pulse (tp10 s) |
ID ID IDM |
75 59 225 |
Adc Apk |
Total Power Dissipation @ TC = 25 Derate above 25 Total Power Dissipation @ TA = 25°C (Note 1) |
PD |
125 1.0 2.5 |
W W/ W |
Operating and Storage Temperature Range |
TJ and Tstg |
−55 to +150 |
|
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25 (VDD = 38 Vdc, VGS = 10 Vdc, L = 1 mH IL(pk) = 55 A, VDS = 40 Vdc) |
EAS |
1500 |
mJ |
Thermal Resistance − Junction−to−Case − Junction−to−Ambient − Junction−to−Ambient (Note 1) |
RJC RJA RJA |
1.0 62.5 50 |
/W |
Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds |
TL |
260 |
|
This 20 VGS gate drive vertical Power MOSFET NTB75N03-06 is a general purpose part that provides the "best of design" available today in a low cost power package. This power MOSFET NTB75N03-06 is designed to withstand high energy in the avalanche and commutation modes. The Drain−to−Source Diode has a fast response with soft recovery.