MOSFET 25V 75A N-Channel
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Features: • Ultra−Low RDS(on), Single Base, Advanced Technology• SPICE Parameter...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 25 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 75 A | ||
Resistance Drain-Source RDS (on) : | 8 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Tube |
Rating |
Symbol |
Value |
Unit |
Drain−to−Source Voltage |
VDSS |
25 |
Vdc |
Gate−to−Source Voltage − Continuous |
VGS |
±20 |
Vdc |
Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25 Drain Current − Continuous @ TC = 25 − Single Pulse (tp10 s) |
RJC PD ID IDM |
1.68 74.4 75 225 |
/W W A A |
Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25 Drain Current − Continuous @ TA = 25 |
RJA PD ID |
60 2.08 12.6 |
/W W A |
Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25 Drain Current − Continuous @ TA = 25 |
RJA PD ID |
100 1.25 9.7 |
/W W A |
Operating and Storage Temperature Range |
TJ, Tstg |
−55 to +150 |
|
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25 (VDD = 30 Vdc, VGS = 10 Vdc, IL = 12 Apk, L = 1 mH, RG = 25) |
EAS |
71.7 |
mJ |
Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds |
TL |
260 |
|