NTB75N03L09

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 8 mOhms at 5 V


Features:

• Pb−Free Packages are Available
• Ultra−Low RDS(on), Single Base, Advanced Technology
• SPICE Parameters Available
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperatures
• High Avalanche Energy Specified
• ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0


Application

• Power Supplies
• Inductive Loads
• PWM Motor Controls
• Replaces MTP75N03HDL and MTB75N03HDL in Many Applications


Pinout




Specifications

Rating	Symbol	Value	Unit
Drain−to−Source Voltage	VDSS	−30	Vdc
Drain−to−Gate Voltage (RGS = 10 m)	VDGR	30	Vdc
Gate−to−Source Voltage − Continuous	VGS	±20	Vdc
Non−repetitive (tp 3 10 ms)	VGS	±24	Vdc
Drain Current − Continuous @ TC = 25°C − Continuous @ TC = 100°C − Single Pulse (tp 3 10 s)	ID ID IDM	75 59 225	Adc Apk
Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1)	PD	125 1.0 2.5	W W/°C W
Operating and Storage Temperature Range	TJ and Tstg	−55 to 150	°C
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 38 Vdc, VGS = 10 Vdc, L = 1 mH, IL(pk) = 55 A, VDS = 40 Vdc)	EAS	1500	mJ
Thermal Resistance − Junction−to−Case − Junction−to−Ambient − Junction−to−Ambient (Note 1)	RJC RJA RJA	1.0 62.5 50	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds	TL	260	°C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended pad size.


Description

This Logic Level Vertical Power MOSFET NTB75N03L09 is a general purpose part that provides the "best of design" available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft recovery.