MOSFET -20V -760mA PChannel
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 6 V | Continuous Drain Current : | 0.76 A | ||
Resistance Drain-Source RDS (on) : | 360 mOhms at 4.5 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-416 | Packaging : | Reel |
Technical/Catalog Information | NTA4151PT1G |
Vendor | ON Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 760mA |
Rds On (Max) @ Id, Vgs | 360 mOhm @ 350mA, 4.5V |
Input Capacitance (Ciss) @ Vds | 156pF @ 5V |
Power - Max | 301mW |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 2.1nC @ 4.5V |
Package / Case | SC-75-3, SOT-416, EMT3 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NTA4151PT1G NTA4151PT1G NTA4151PT1GOSDKR ND NTA4151PT1GOSDKRND NTA4151PT1GOSDKR |