MOSFET 20V 238mA N-Channel
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 10 V | Continuous Drain Current : | 0.238 A | ||
Resistance Drain-Source RDS (on) : | 3000 mOhms at 4.5 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-416 | Packaging : | Reel |
Technical/Catalog Information | NTA4001NT1 |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 238mA |
Rds On (Max) @ Id, Vgs | 3 Ohm @ 10mA, 4.5V |
Input Capacitance (Ciss) @ Vds | 20pF @ 5V |
Power - Max | 300mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | - |
Package / Case | SC-75-3, SOT-416, EMT3 |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | NTA4001NT1 NTA4001NT1 NTA4001NT1OS ND NTA4001NT1OSND NTA4001NT1OS |