Features: ·4,194,304-word x 4-bit configuration·Single 5V power supply,+/-10% tolerance·Input :TTL compatible , low input capacitance·Output :TTL compatible , 3-state·Refresh :2048 cycles/32 ms·Fast page mode with EDO, read modify write capability·/CAS before /RAS refresh, hidden refresh, /RAS-onl...
NT511740C5J: Features: ·4,194,304-word x 4-bit configuration·Single 5V power supply,+/-10% tolerance·Input :TTL compatible , low input capacitance·Output :TTL compatible , 3-state·Refresh :2048 cycles/32 ms·Fast...
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Features: · Fast Page Mode operation .· TTL(5V) compatible inputs and outputs· Single +5V ± 10% po...
Features: · Extended Data Out Mode operation (Fast Page Mode with Extended Data Out)· TTL(5V) comp...
Features: • 184 Dual In-Line Memory Module (DIMM)• Unbuffer• DRAM DLL aligns DQ ...
Parameter | Symbol | Rating | Units |
Voltage on Any Pin Relative to VSS | VIN,VOUT | -0.3 to VCC+0.3 |
V |
Voltage on VCC Supply Relative to VSS | VCC | -0.5 to 7 | V |
Short Circuit Output Cuttent | IOS | 50 | mA |
Po/WEr Dissipation | PD* | 1 | W |
Operation Temperature | Topr | 0 to 70 | |
Storage Temperature | Tstg | -55 to 150 |
The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTC's CMOS silicon gate technology. It achieves high integration , high-speed operation , and lowpower consumption due to quadruple polysilicon double metal CMOS. It is available in a 26/24-pin plastic SOJ.