Transistors Switching (Resistor Biased) SS GP XSTR NPN
NSTB60BDW1T1G: Transistors Switching (Resistor Biased) SS GP XSTR NPN
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Transistors Switching (Resistor Biased) 100mA Complementary 50V Dual NPN & PNP
Transistors Switching (Resistor Biased) 100mA Complementary 50V Dual NPN & PNP
Configuration : | Dual | Transistor Polarity : | NPN | ||
Typical Input Resistor : | 22 KOhms | Typical Resistor Ratio : | 2.13 | ||
Mounting Style : | SMD/SMT | Package / Case : | SOT-363-6 | ||
Collector- Emitter Voltage VCEO Max : | 50 V | Continuous Collector Current : | - 150 mA | ||
Peak DC Collector Current : | 150 mA | Power Dissipation : | 256 mW | ||
Maximum Operating Temperature : | + 150 C | Packaging : | Reel |
Technical/Catalog Information | NSTB60BDW1T1G |
Vendor | ON Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Transistor Type | 1 NPN Prebiased, 1 PNP (Dual) |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Current - Collector (Ic) (Max) | 150mA |
Power - Max | 250mW |
Resistor - Base (R1) (Ohms) | 22K |
Resistor - Emitter Base (R2) (Ohms) | 47K |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA / 250mV @ 5mA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 5mA, 10V / 80 @ 5mA, 10V |
Frequency - Transition | 140MHz |
Mounting Type | * |
Package / Case | * |
Packaging | * |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NSTB60BDW1T1G NSTB60BDW1T1G NSTB60BDW1T1GOSCT ND NSTB60BDW1T1GOSCTND NSTB60BDW1T1GOSCT |