NSTB1002DXV5T1

TRANSISTOR BRT NPN/PNP SOT-553

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SeekIC No. : 003435816 Detail

NSTB1002DXV5T1: TRANSISTOR BRT NPN/PNP SOT-553

floor Price/Ceiling Price

Part Number:
NSTB1002DXV5T1
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Quick Details

Series: - Manufacturer: ON Semiconductor
Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 200mA
Voltage - Collector Emitter Breakdown (Max): 50V, 40V Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k Breakdown Voltage : 22.8 V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 100 @ 1mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz
Power - Max: 500mW Mounting Type: Surface Mount
Package / Case: SOT-553 Supplier Device Package: SOT-553    

Description

Series: -
Resistor - Emitter Base (R2) (Ohms): 47k
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Resistor - Base (R1) (Ohms): 47k
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Voltage - Collector Emitter Breakdown (Max): 50V, 40V
Manufacturer: ON Semiconductor
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA, 200mA
Package / Case: SOT-553
Supplier Device Package: SOT-553
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 100 @ 1mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 400mV @ 5mA, 50mA


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