NSS40600CF8T1G

Transistors Bipolar (BJT) LOW VCES 40V PNP

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NSS40600CF8T1G: Transistors Bipolar (BJT) LOW VCES 40V PNP

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US $ .24~.48 / Piece | Get Latest Price
Part Number:
NSS40600CF8T1G
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • 25~100
  • 100~500
  • Unit Price
  • $.48
  • $.42
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  • $.24
  • Processing time
  • 15 Days
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Upload time: 2025/1/8

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 40 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 6 A
DC Collector/Base Gain hfe Min : 250 Configuration : Single Hex Collector
Maximum Operating Frequency : 100 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : Chip FET
Packaging : Reel    

Description

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 7 V
Maximum Operating Frequency : 100 MHz (Min)
Collector- Emitter Voltage VCEO Max : 40 V
Maximum DC Collector Current : 6 A
DC Collector/Base Gain hfe Min : 250
Configuration : Single Hex Collector
Package / Case : Chip FET


Pinout

  Connection Diagram


Description

The NSS40600CF8T1G is designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. The features of NSS40600CF8T1G are as follows: (1)Low RDS(on) to Minimize Conduction Losses; (2)Low Capacitance to Minimize Driver Losses; (3)Optimized Gate Charge to Minimize Switching Losses; (4)These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant.

The following is about the absolute maximum ratings of NSS40600CF8T1G: (1)Collector-Emitter Voltage: -40 Vdc; (2)Collector-Base Voltage: -40 Vdc; (3)Emitter-Base Voltage: -7.0 Vdc; (4)Collector Current - Continuous: -6.0 Adc; (5)Collector Current - Peak: -7.0 A; (6)Electrostatic Discharge: HBM Class 3B MM Class C.

The electrical characteristics of the NSS40600CF8T1G are: (1)Collector .Emitter Breakdown Voltage(IC = -10 mAdc, IB = 0): -40Vdc; (2)Collector .Base Breakdown Voltage(IC = -0.1 mAdc, IE = 0); (3)V(BR): -40Vdc; (4)Emitter .Base Breakdown Voltage(IE = -0.1 mAdc, IC = 0): -7.0Vdc; (5)Collector Cutoff Current (VCB = -40 Vdc, IE = 0): -0.1Adc; (6)Emitter Cutoff Current (VEB = -7.0 Vdc): -0.1Adc; (7)Collector Cutoff Current (VCB = .6.5 Vdc, VBE(off) = 0 Vdc): 10Adc.




Parameters:

Technical/Catalog InformationNSS40600CF8T1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)40V
Current - Collector (Ic) (Max)6A
Power - Max830mW
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1A, 2V
Vce Saturation (Max) @ Ib, Ic120mV @ 200mA, 2A
Frequency - Transition100MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / Case8-ChipFET?
PackagingTape & Reel (TR)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NSS40600CF8T1G
NSS40600CF8T1G



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