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NSS40200UW6T1G

Transistors Bipolar (BJT) WDFN6 2*2 LOW VCE (SAT) TR

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SeekIC No. : 00208023 Detail

NSS40200UW6T1G: Transistors Bipolar (BJT) WDFN6 2*2 LOW VCE (SAT) TR

NSS40200UW6T1G Data Sheet

floor Price/Ceiling Price

US $ .21~.41 / Piece | Get Latest Price
Part Number:
NSS40200UW6T1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.41
  • $.32
  • $.28
  • $.21
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 40 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 2 A
DC Collector/Base Gain hfe Min : 150 Configuration : Single Quad Collector
Maximum Operating Frequency : 140 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : WDFN
Packaging : Reel    

Description

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
DC Collector/Base Gain hfe Min : 150
Emitter- Base Voltage VEBO : 7 V
Collector- Emitter Voltage VCEO Max : 40 V
Package / Case : WDFN
Configuration : Single Quad Collector
Maximum DC Collector Current : 2 A
Maximum Operating Frequency : 140 MHz (Min)


Parameters:

Technical/Catalog InformationNSS40200UW6T1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)40V
Current - Collector (Ic) (Max)2A
Power - Max1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic300mV @ 20mA, 2A
Frequency - Transition140MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / Case6-WDFN
PackagingTape & Reel (TR)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NSS40200UW6T1G
NSS40200UW6T1G
NSS40200UW6T1GOSTR ND
NSS40200UW6T1GOSTRND
NSS40200UW6T1GOSTR



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