Transistors Bipolar (BJT) 2A 35V Low VCEsat
NSS35200MR6T1G: Transistors Bipolar (BJT) 2A 35V Low VCEsat
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 35 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 2 A |
DC Collector/Base Gain hfe Min : | 100 at 1 mA at 2 V | Configuration : | Single Quad Collector |
Maximum Operating Frequency : | 100 MHz (Min) | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | TSOP |
Packaging : | Reel |
Technical/Catalog Information | NSS35200MR6T1G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 35V |
Current - Collector (Ic) (Max) | 2A |
Power - Max | 1W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1.5A, 1.5V |
Vce Saturation (Max) @ Ib, Ic | 310mV @ 20mA, 2A |
Frequency - Transition | 100MHz |
Current - Collector Cutoff (Max) | 100nA |
Mounting Type | Surface Mount |
Package / Case | 6-TSOP |
Packaging | Tape & Reel (TR) |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NSS35200MR6T1G NSS35200MR6T1G NSS35200MR6T1GOSTR ND NSS35200MR6T1GOSTRND NSS35200MR6T1GOSTR |