NSBC114YPDXV6T5G

Transistors Switching (Resistor Biased) 100mA Complementary 50V Dual NPN & PNP

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NSBC114YPDXV6T5G: Transistors Switching (Resistor Biased) 100mA Complementary 50V Dual NPN & PNP

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Part Number:
NSBC114YPDXV6T5G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~8000
  • 8000~8300
  • 8300~10000
  • 10000~25000
  • Unit Price
  • $.04
  • $.04
  • $.04
  • $.04
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Configuration : Dual Transistor Polarity : PNP
Typical Input Resistor : 10 KOhms Typical Resistor Ratio : 0.21
Mounting Style : SMD/SMT Package / Case : SOT-563-6
Collector- Emitter Voltage VCEO Max : 50 V Continuous Collector Current : 0.1 A
Peak DC Collector Current : 100 mA Power Dissipation : 357 mW
Maximum Operating Temperature : + 150 C Packaging : Reel    

Description

Maximum Operating Frequency :
Maximum Operating Temperature : + 150 C
Packaging : Reel
Mounting Style : SMD/SMT
Collector- Emitter Voltage VCEO Max : 50 V
Typical Input Resistor : 10 KOhms
Transistor Polarity : PNP
Configuration : Dual
Peak DC Collector Current : 100 mA
Package / Case : SOT-563-6
Continuous Collector Current : 0.1 A
Typical Resistor Ratio : 0.21
Power Dissipation : 357 mW


Parameters:

Technical/Catalog InformationNSBC114YPDXV6T5G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)100mA
Power - Max500mW
Resistor - Base (R1) (Ohms)10K
Resistor - Emitter Base (R2) (Ohms)47K
Vce Saturation (Max) @ Ib, Ic250mV @ 300A, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Frequency - Transistion-
Mounting TypeSurface Mount
Package / CaseSOT-563
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NSBC114YPDXV6T5G
NSBC114YPDXV6T5G



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