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NSBC113EDXV6T5

TRANS BRT NPN DUAL 50V SOT563

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SeekIC No. : 003435743 Detail

NSBC113EDXV6T5: TRANS BRT NPN DUAL 50V SOT563

NSBC113EDXV6T5 Data Sheet

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Part Number:
NSBC113EDXV6T5
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Series: - Manufacturer: ON Semiconductor
Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 1k Breakdown Voltage : 22.8 V
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA Frequency - Transition: -
Power - Max: 500mW Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563    

Description

Series: -
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: -
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Current - Collector Cutoff (Max): 500nA
Resistor - Base (R1) (Ohms): 1k
Supplier Device Package: SOT-563
Manufacturer: ON Semiconductor
Resistor - Emitter Base (R2) (Ohms): 1k
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Power - Max: 500mW


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