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NP86N04EHE

Features: • Channel temperature 175 degree rated• Super low on-state resistance RDS(on) = 4.4 m MAX. (VGS = 10 V, ID = 43 A)• Low input capacitance Ciss = 5900 pF TYP.• Built-in gate protection diodeSpecifications Drain to Source Voltage (VGS = 0 V) VDSS 40 V Ga...

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NP86N04EHE: Features: • Channel temperature 175 degree rated• Super low on-state resistance RDS(on) = 4.4 m MAX. (VGS = 10 V, ID = 43 A)• Low input capacitance Ciss = 5900 pF TYP.• Built...

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Part Number:
NP86N04EHE
Supply Ability:
5000

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Product Details

Description



Features:

• Channel temperature 175 degree rated
• Super low on-state resistance RDS(on) = 4.4 m MAX. (VGS = 10 V, ID = 43 A)
• Low input capacitance Ciss = 5900 pF TYP.
• Built-in gate protection diode


Specifications

Drain to Source Voltage (VGS = 0 V) VDSS 40 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) Note1 ID(DC) ±86 A
Drain Current (Pulse) Note2 ID(pulse) ±344 A
Total Power Dissipation (TC = 25°C) PT 230 W
Total Power Dissipation (TA = 25°C) PT 1.8 W
Channel Temperature Tch 175 °C
Storage Temperature Tstg −55 to +175 °C
Single Avalanche Current Note3 IAS 86/67/24 A
Single Avalanche Energy Note3 EAS 74/450/580 mJ
Notes
1. Calculated constant current according to MAX. allowable channel temperature.
2. PW 10 s, Duty cycle 1%
3. Starting Tch = 25°C, VDD = 20 V, RG = 25 , VGS = 20 0 V (see Figure 4.)


Description

These products NP86N04EHE are N-channel MOS Field Effect Transistors designed for high current switching applications.


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