Position: Home  > All Categories> Integrated Circuits (ICs) > NP86N04CHE

NP86N04CHE

Features: • Channel temperature 175 degree rated• Super low on-state resistance RDS(on) = 4.4 m MAX. (VGS = 10 V, ID = 43 A)• Low input capacitance Ciss = 5900 pF TYP.• Built-in gate protection diodeSpecifications Drain to Source Voltage (VGS = 0 V) VDSS 40 V Ga...

product image

NP86N04CHE Picture
See larger image
SeekIC No. : 004435097 Detail

NP86N04CHE: Features: • Channel temperature 175 degree rated• Super low on-state resistance RDS(on) = 4.4 m MAX. (VGS = 10 V, ID = 43 A)• Low input capacitance Ciss = 5900 pF TYP.• Built...

NP86N04CHE Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
NP86N04CHE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Channel temperature 175 degree rated
• Super low on-state resistance RDS(on) = 4.4 m MAX. (VGS = 10 V, ID = 43 A)
• Low input capacitance Ciss = 5900 pF TYP.
• Built-in gate protection diode


Specifications

Drain to Source Voltage (VGS = 0 V) VDSS 40 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) Note1 ID(DC) ±86 A
Drain Current (Pulse) Note2 ID(pulse) ±344 A
Total Power Dissipation (TC = 25°C) PT 230 W
Total Power Dissipation (TA = 25°C) PT 1.8 W
Channel Temperature Tch 175 °C
Storage Temperature Tstg −55 to +175 °C
Single Avalanche Current Note3 IAS 86/67/24 A
Single Avalanche Energy Note3 EAS 74/450/580 mJ
Notes
1. Calculated constant current according to MAX. allowable channel temperature.
2. PW 10 s, Duty cycle 1%
3. Starting Tch = 25°C, VDD = 20 V, RG = 25 , VGS = 20 0 V (see Figure 4.)


Description

These products NP86N04CHE are N-channel MOS Field Effect Transistors designed for high current switching applications.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Tapes, Adhesives
803
AC452-2
Integrated Circuits (ICs)
TA8435H
1MB12-140
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
View more