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NP32N055SHE-E1-AY

MOSFET N-CH 55V 32A TO-252

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SeekIC No. : 003430292 Detail

NP32N055SHE-E1-AY: MOSFET N-CH 55V 32A TO-252

NP32N055SHE-E1-AY Data Sheet

floor Price/Ceiling Price

US $ .51~.51 / Piece | Get Latest Price
Part Number:
NP32N055SHE-E1-AY
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~2500
  • Unit Price
  • $.51
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Series: - Manufacturer: Renesas Electronics America
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V Continuous Drain Current : 15 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 32A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 25 mOhm @ 16A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 32nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1600pF @ 25V
Power - Max: 1.2W Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (MP-3ZK)    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) @ Vgs: 32nC @ 10V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25° C: 32A
Input Capacitance (Ciss) @ Vds: 1600pF @ 25V
Drain to Source Voltage (Vdss): 55V
Power - Max: 1.2W
Manufacturer: Renesas Electronics America
Supplier Device Package: TO-252 (MP-3ZK)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 16A, 10V


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