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NP32N055ILE

Features: •Channel temperature 175 degree rated• Super low on-state resistance RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 29 mΩ MAX. (VGS = 5.0 V, ID = 16 A)• Low Ciss : Ciss = 1300 pF TYP.• Built-in gate protection diodeSpecifications Drain t...

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NP32N055ILE: Features: •Channel temperature 175 degree rated• Super low on-state resistance RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 29 mΩ MAX. (VGS = 5.0 V, ID = 16 A)...

NP32N055ILE Data Sheet

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Part Number:
NP32N055ILE
Supply Ability:
5000

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Product Details

Description



Features:

•Channel temperature 175 degree rated
• Super low on-state resistance
       RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A)
       RDS(on)2 = 29 mΩ MAX. (VGS = 5.0 V, ID = 16 A)
• Low Ciss : Ciss = 1300 pF TYP.
• Built-in gate protection diode


Specifications

Drain to Source Voltage VDSS 55 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±32 A
Drain Current (Pulse) Note1 ID(pulse) ±100 A
Total Power Dissipation (TA = 25°C) PT 1.2 W
Total Power Dissipation (TC = 25°C) PT 22 W
Single Avalanche Current Note2 IAS 28 / 21 / 8 A
Single Avalanche Energy Note2 EAS 7.8 / 44 / 64 mJ
Channel Temperature Tch 175
Storage Temperature Tstg 55 to +175



Description

These products NP32N055ILE are N-channel MOS Field Effect Transistor designed for high current switching applications.


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