PinoutDescriptionThe NM93CS06EM8 is a 256-bit, respectively, of CMOS non-volatile electrically erasable memory divided into 16-bit registers. Features of the NM93CS06EM8 are:(1)write protection in a user defined selection of memory;(2)sequential reguster read;(3)typical active current of 400 A an...
NM93CS06EM8: PinoutDescriptionThe NM93CS06EM8 is a 256-bit, respectively, of CMOS non-volatile electrically erasable memory divided into 16-bit registers. Features of the NM93CS06EM8 are:(1)write protection in ...
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The NM93CS06EM8 is a 256-bit, respectively, of CMOS non-volatile electrically erasable memory divided into 16-bit registers.
Features of the NM93CS06EM8 are:(1)write protection in a user defined selection of memory;(2)sequential reguster read;(3)typical active current of 400 A and standby current of 25 A;(4)no erase required before write;(5)reliable CMOS floating gate technology;(6)MICROWIRE compatible serial I/O;(7)self timed write cycle;(8)device status during programming mode;(9)40 year data retention;(10)endurance:10^6 data changes;(11)4.5V to 5.5V operation in all-modes of operation;(12)packages available:8-pin DIP or 8-pin SO.
The absolute maximum ratings of the NM93CS06EM8 can be summarized as:(1):the symbol is TA,the parameter is ambient storage temperature,the value is -65 to +150,the unit is ;(2):the symbol is VI/O,the parameter is all input or output voltages with respect to ground,the value is +6.5 to -0.3,the unit is V;(3):the symbol is TL,the parameter is lead temperature (soldering,10 sec),the value is +300,the unit is ;(4):the parameter is ESD rating,the value is 2000,the unit is V.