Features: · Less than 1.0 mA standby current· 2.7V±5.5V operation in all modes· Typical active current of 100 mA· Direct write: no erase before program· Reliable CMOS floating gate technology· MICROWIRE compatible serial I/O· Self-timed programming cycle· Device status indication during programmin...
NM93C06LZ: Features: · Less than 1.0 mA standby current· 2.7V±5.5V operation in all modes· Typical active current of 100 mA· Direct write: no erase before program· Reliable CMOS floating gate technology· MICRO...
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The NM93C06LZ/C46LZ/C56LZ/C66LZ devices are 256/ 1024/2048/4096 bits respectively, of CMOS non-volatile electrically erasable memory of NM93C06LZ divided into 16/64/128/256 16-bit registers. NM93C06LZ are fabricated using National Semiconductor's floating-gate CMOS process for high reliability and low power consumption. These memory devices are available in both SO and TSSOP packages for small space considerations.
The serial NM93C06LZ interface that operates these EEPROMs is MICROWIRE compatible for simple interface to standard microcontrollers and microprocessors. There are 7 instructions of NM93C06LZ that control these devices: Read, Erase/Write Enable, Erase, Erase All, Write, Write All, and Erase/Write Disable. The ready/busy status is available on the DO pin to indicate the completion of a programming cycle.