NM93CS06

Features: ` Write protection in a user defined section of memory` Sequential register read` Typical active current of 400 mA and standby current of 25 A` No erase required before write` Reliable CMOS floating gate technology` MICROWIRE compatible serial I/O` Self timed write cycle` Device status d...

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NM93CS06 Picture
SeekIC No. : 004434884 Detail

NM93CS06: Features: ` Write protection in a user defined section of memory` Sequential register read` Typical active current of 400 mA and standby current of 25 A` No erase required before write` Reliable CMO...

floor Price/Ceiling Price

Part Number:
NM93CS06
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/8

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Product Details

Description



Features:

` Write protection in a user defined section of memory
` Sequential register read
` Typical active current of 400 mA and standby current of 25 A
` No erase required before write
` Reliable CMOS floating gate technology
` MICROWIRE compatible serial I/O
` Self timed write cycle
` Device status during programming mode
` 40 year data retention
` Endurance: 106 data changes
` 4.5V to 5.5V operation in all modes of operation
` Packages available: 8-pin SO, 8-pin DIP



Pinout

  Connection Diagram


Specifications

Ambient Storage Temperature  . . . . . . . . .-65 to +150
All Input or Output Voltages  . . . . . . . . . . . +6.5V to -0.3V
with Respect to Ground
Lead Temperature (Soldering, 10 sec.)  . . . . . . . . .+300
ESD rating  . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . .2000V



Description

The NM93CS06/CS46/CS56/CS66 devices are 256/1024/2048/4096 bits, respectively, of CMOS non-volatile electrically erasable memory divided into 16/64/128/ 256 16-bit registers. Selected registers NM93CS06 can be protected against data modification by programming the Protect Register with the address of the first register to be protected against data modification (all registers greater than, or equal to, the selected address are then protected from further change). Additionally, NM93CS06 address can be ``locked'' into NM93CS06, making all future attempts to change data impossible.

NM93CS06 are fabricated using National Semiconductor floating-gate CMOS process for high reliability, high endurance and low power consumption. The NM93CSXX Family is offered in an SO package for small space considerations.

The EEPROM interfacing is MICROWIRE compatible providing simple of NM93CS06 interfacing to standard microcontrollers and microprocessors. There are a total of 10 instructions, 5 which operate on the EEPROM memory, and 5 which operate on the Protect Register. The memory instructions are READ, WRITE, WRITE ALL, WRITE ENABLE, and WRITE DISABLE. The Protect register NM93CS06 instructions are PRREAD, PRWRITE, PRENABLE, PRCLEAR, and PRDISABLE.




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