Features: ` Write protection in a user defined section of memory` Sequential register read` Typical active current of 400 mA and standby current of 25 A` No erase required before write` Reliable CMOS floating gate technology` MICROWIRE compatible serial I/O` Self timed write cycle` Device status d...
NM93CS06: Features: ` Write protection in a user defined section of memory` Sequential register read` Typical active current of 400 mA and standby current of 25 A` No erase required before write` Reliable CMO...
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The NM93CS06/CS46/CS56/CS66 devices are 256/1024/2048/4096 bits, respectively, of CMOS non-volatile electrically erasable memory divided into 16/64/128/ 256 16-bit registers. Selected registers NM93CS06 can be protected against data modification by programming the Protect Register with the address of the first register to be protected against data modification (all registers greater than, or equal to, the selected address are then protected from further change). Additionally, NM93CS06 address can be ``locked'' into NM93CS06, making all future attempts to change data impossible.
NM93CS06 are fabricated using National Semiconductor floating-gate CMOS process for high reliability, high endurance and low power consumption. The NM93CSXX Family is offered in an SO package for small space considerations.
The EEPROM interfacing is MICROWIRE compatible providing simple of NM93CS06 interfacing to standard microcontrollers and microprocessors. There are a total of 10 instructions, 5 which operate on the EEPROM memory, and 5 which operate on the Protect Register. The memory instructions are READ, WRITE, WRITE ALL, WRITE ENABLE, and WRITE DISABLE. The Protect register NM93CS06 instructions are PRREAD, PRWRITE, PRENABLE, PRCLEAR, and PRDISABLE.