NLAS44599

Features: • Channel Select Input Over−Voltage Tolerant to 5.5 V• Fast Switching and Propagation Speeds• Break−Before−Make Circuitry• Low Power Dissipation: ICC = 2 A (Max) at TA = 25°C• Diode Protection Provided on Channel Select Input• Improve...

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SeekIC No. : 004434753 Detail

NLAS44599: Features: • Channel Select Input Over−Voltage Tolerant to 5.5 V• Fast Switching and Propagation Speeds• Break−Before−Make Circuitry• Low Power Dissipation: ...

floor Price/Ceiling Price

Part Number:
NLAS44599
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/26

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Product Details

Description



Features:

• Channel Select Input Over−Voltage Tolerant to 5.5 V
• Fast Switching and Propagation Speeds
• Break−Before−Make Circuitry
• Low Power Dissipation: ICC = 2 A (Max) at TA = 25°C
• Diode Protection Provided on Channel Select Input
• Improved Linearity and Lower ON Resistance over Input Voltage
• Latch−up Performance Exceeds 300 mA
• ESD Performance: Human Body Model; > 2000 V, Machine Model; > 200 V
• Chip Complexity: 158 FETs



Pinout

  Connection Diagram


Specifications

Symbol Parameter Value Unit
VCC Positive DC Supply Voltage -0.5 to +7.0 V
VIS Analog Input Voltage (VNO or VCOM) -0.5 VISVCC +0.5 V
VIN Digital Select Input Voltage -0.5 VI + 0.5 V
IIK DC Current, Into or Out of Any Pin ±50 mA
PD Power Dissipation in Still Air QFN−16
TSSOP−16
800
450

mA
TSTG Storage Temperature Range -65 to +150 °C
TL Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
TJ Junction Temperature Under Bias +150 °C
MSL Moisture Sensitivity Level 1  
FR Flammability Rating Oxygen Index: 28 to 34 UL 94−V0 (0.125 in)  
VESD ESD Withstand Voltage Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
2000
200
1000
V
ILatchUp LatchUp Performance Above VCC and Below GND at 85C (Note 5) ±300 mA
JA Thermal Resistance SOT- 353 (Note 1)
SOT- 553
80
164
°C/W

Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute−maximum−rated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions.
1. Tested to EIA/JESD22−A114−A.
2. Tested to EIA/JESD22−A115−A.
3. Tested to JESD22−C101−A.
4. Tested to EIA/JESD78.




Description

The NLAS44599 is an advanced dual−independent CMOS double pole−double throw (DPDT) analog switch fabricated with silicon gate CMOS technology. It achieves high speed propagation delays and low ON resistances while maintaining CMOS low power dissipation. This DPDT controls analog and digital voltages that may vary across the full power−supply range (from VCC to GND).

NLAS44599 has been designed so the ON resistance (RON) is much lower and more linear over input voltage than RON of typical CMOS analog switches.

The channel select input is compatible with standard CMOS outputs. The channel select input structure of NLAS44599 provides protection when voltages between 0 V and 5.5 V are applied, regardless of the supply voltage. This input structure helps prevent device destruction caused by supply voltage − input/output voltage mismatch, battery backup, hot insertion, etc.

The NLAS44599 can also be used as a quad 2−to−1 multiplexer− demultiplexer analog switch with two Select pins that each controls two multiplexer−demultiplexers.




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